Publications in Scientific Journals:
M. Waltl:
"Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors";
IEEE Transactions on Device and Materials Reliability (invited),
20
(2020),
2;
242
- 250.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TDMR.2020.2988650
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Waltl_1.pdf
Created from the Publication Database of the Vienna University of Technology.