Talks and Poster Presentations (with Proceedings-Entry):
J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser:
"Similarities and Differences of BTI in SiC and Si Power MOSFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS),
Dallas, TX, USA - virtual;
2020-03-29
- 2020-04-02; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)",
(2020),
ISBN: 978-1-7281-3200-6;
1
- 6.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IRPS45951.2020.9129259
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Berens_1.pdf
Created from the Publication Database of the Vienna University of Technology.