Publications in Scientific Journals:
B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
IEEE Transactions on Device and Materials Reliability (invited),
20
(2020),
2;
251
- 257.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TDMR.2020.2985109
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Stampfer_2.pdf
Created from the Publication Database of the Vienna University of Technology.