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Talks and Poster Presentations (with Proceedings-Entry):

M. Jungwirth, A. Dervic, H. Zimmermann:
"Integrated High Voltage Active Quenching Circuit in 150nm CMOS Technology";
Talk: Austrochip, Wien; 2020-10-07; in: "2020 Austrochip Workshop on Microelectronics", (2020), ISBN: 978-1-7281-8493-7; 4 pages.



English abstract:
An integrated high voltage active quenching circuit (AQC) in a 150 nm high voltage CMOS technology is presented. The circuit is designed for off-chip single-photon avalanche diodes (SPAD) with parasitic capacitance up to 5 pF. With the high voltage lateral double-diffused MOSFETs (LDMOS) the circuit is able to apply excess bias voltages up to 35 V. The excess bias voltage for the SPAD is adjustable from
5 V up to 35 V and retains a constant quenching time of 2.2 ns at a SPAD capacitance of 5 pF.

Keywords:
SPAD, CMOS, high voltage, active quenching circuit, AQC, quenching circuit


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/Austrochip51129.2020.9232988


Created from the Publication Database of the Vienna University of Technology.