Publications in Scientific Journals:
M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser:
"Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors";
Microelectronics Reliability,
114
(2020),
113746-1
- 113746-5.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.microrel.2020.113746
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Waltl_3.pdf
Created from the Publication Database of the Vienna University of Technology.