Publications in Scientific Journals:
M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
"The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
Crystals (invited),
10
(2020),
12;
1143-1
- 1143-14.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.3390/cryst10121143
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Feil_1.pdf
Created from the Publication Database of the Vienna University of Technology.