Publications in Scientific Journals:
M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
"On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
IEEE Transactions on Electron Devices,
68
(2021),
1;
236
- 243.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2020.3036321
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Feil_2.pdf
Created from the Publication Database of the Vienna University of Technology.