Publications in Scientific Journals:
J. Berens, G. Pobegen, T. Grasser:
"Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum,
1004
(2020),
652
- 658.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.1004.652
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Berens_1.pdf
Created from the Publication Database of the Vienna University of Technology.