Talks and Poster Presentations (with Proceedings-Entry):
M. Hofbauer, B. Steindl, K. Schneider-Hornstein, B. Goll, K.O. Voss, H. Zimmermann:
"Single-Event Transients in a PIN Photodiode and a Single-Photon Avalanche Diode Integrated in 0.35µm CMOS";
Talk: Radiation Effects on Components & Systems Conference (RADECS),
Göteborg, Sweden;
09-16-2018
- 09-21-2018; in: "2018 18th European Conference on Radiation and Its Effects on Components and Systems",
(2018),
ISBN: 978-1-7281-0216-0.
English abstract:
Single-event transients (SETs) in a PIN photodiode and a single-photon avalanche diode (SPAD), both fabricated in the same 0.35µm CMOS process, are compared under heavy ion irradiation. The experimental results suggest that mainly the low-doped epitaxial layer defines the amount of collected charge. High current peaks at the output of the photodetectors, necessitate precautions in the quencher and read-out circuit design.
Keywords:
single-event transient (SET), PIN photodiode, single-photon avalanche diode (SPAD), avalanche photo diode (APD), heavy ions, micro-beam, CMOS.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/RADECS45761.2018.9328700
Created from the Publication Database of the Vienna University of Technology.