Talks and Poster Presentations (with Proceedings-Entry):
K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl:
"Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW),
South Lake Tahoe, CA, USA - virtual;
2020-10-04
- 2020-10-08; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)",
(2020),
1
- 6.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IIRW49815.2020.9312871
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Tselios_1.pdf
Created from the Publication Database of the Vienna University of Technology.