Contributions to Books:
T. Sadi, C. Medina-Bailón, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carrillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
"Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
in: "Nanowire Field-Effect Transistor (FET)",
A. García-Loureiro, K. Kalna, N. Seoane (ed.);
MDPI,
Basel,
2019,
ISBN: 978-3-03936-208-0,
41
- 51.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.3390/ma12010124
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2021/BC2021_Sadi_1.pdf
Created from the Publication Database of the Vienna University of Technology.