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Publications in Scientific Journals:

C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
"Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
IEEE Transactions on Electron Devices, 68 (2021), 8; 4016 - 4021.



"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2021.3092295

Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Schleich_1.pdf


Created from the Publication Database of the Vienna University of Technology.