Publications in Scientific Journals:
C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
"Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
IEEE Transactions on Electron Devices,
68
(2021),
8;
4016
- 4021.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2021.3092295
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Schleich_1.pdf
Created from the Publication Database of the Vienna University of Technology.