[Zurück]

M. Leitgeb, G. Pfusterschmied, S. Schwarz, B. Depuydt, J. Cho, U. Schmid:
"Communication-Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide";
ECS Journal of Solid State Science and Technology, 10 (2021), 073003; S. 1 - 3.

Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first
time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The
period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly
of the pores in a top down view is a Turing pattern.