[Zurück]


Zeitschriftenartikel:

F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J. Konrath, U. Schmid:
"Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiC";
Materials Science in Semiconductor Processing, 131 (2021), 105888; S. 1 - 8.



Kurzfassung englisch:
Si/4H-SiC heterostructures are synthesized with low pressure chemical vapor deposition at temperatures ranging
from 700 to 1080 ◦C. Microstructural investigations comprise scanning and transmission electron microscopy, as
well as X-ray diffractometry analyses. The Si<111> and Si<110> growth orientations are found to be the most
dominant, with a strong influence from the deposition temperature. Almost only Si<110> oriented and closed Si
films are found at a deposition temperature of 900 ◦C. At the latter deposition temperature and above, the Si
growth is heteroepitaxial. Heterojunction diodes by p+ and n+ doping of the Si top layer are fabricated and
characterized. Strong Fermi level pinning is found to be responsible for deposition temperature dependent
Schottky barrier heights.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.mssp.2021.105888


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.