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F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J. Konrath, U. Schmid:
"Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiC";
Materials Science in Semiconductor Processing, 131 (2021), 105888; 1 - 8.

Si/4H-SiC heterostructures are synthesized with low pressure chemical vapor deposition at temperatures ranging
from 700 to 1080 ◦C. Microstructural investigations comprise scanning and transmission electron microscopy, as
well as X-ray diffractometry analyses. The Si<111> and Si<110> growth orientations are found to be the most
dominant, with a strong influence from the deposition temperature. Almost only Si<110> oriented and closed Si
films are found at a deposition temperature of 900 ◦C. At the latter deposition temperature and above, the Si
growth is heteroepitaxial. Heterojunction diodes by p+ and n+ doping of the Si top layer are fabricated and
characterized. Strong Fermi level pinning is found to be responsible for deposition temperature dependent
Schottky barrier heights.

http://dx.doi.org/10.1016/j.mssp.2021.105888