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Zeitschriftenartikel:

F. Triendl, G. Pfusterschmied, C. Berger, S. Schwarz, W. Artner, U. Schmid:
"Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer";
Thin Solid Films, 721 (2021), 138539; S. 1 - 8.



Kurzfassung englisch:
The possibility of Schottky barrier height (SBH) modulation of conventional Ti/4H-SiC Schottky diodes by
inserting an ultrathin a-SiC:H layer and the influence of annealing at 600 ◦C are investigated. Amorphous SiC:H
layers between 0.7 and 4 nm thickness were grown on the 4H-SiC surface using plasma-enhanced chemical vapor
deposition prior to Ti deposition. Diode properties are extracted using current-voltage and capacitance-voltage
measurements between 300 and 450 K and compared to conventional Ti/4H-SiC diodes. Transmission elec-
tron microscopy and X-ray diffraction were applied to investigate the microstructure of as-deposited and
annealed diodes. The integration of an a-SiC:H interface layer in combination with thermal annealing resulted in
very ideal diode characteristics, whereas the duration of the annealing can be used to adjust the SBH. A room
temperature SBH range between 0.78 and 1.16 V could be covered using different interface layer thicknesses and
annealing durations.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.tsf.2021.138539


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.