Talks and Poster Presentations (with Proceedings-Entry):
J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer:
"Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, CA, USA;
2021-12-12
- 2021-12-18; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2021),
ISBN: 978-1-7281-8888-1;
31.2.1
- 31.2.4.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM13553.2020.9372054
Electronic version of the publication:
https://www.iue.tuwien.ac.at/pdf/ib_2021/CP2021_Grasser_2.pdf
Created from the Publication Database of the Vienna University of Technology.