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L. Filipovic, T. Grasser (ed.):
"Miniaturized Transistors, Volume II";
MDPI, Basel, 2022, ISBN: 978-3-0365-4169-3; 352 pages.

Due to the great success of the initial Special Issue on Miniaturized Transistors, we have decided to continue addressing the ever-advancing progress in microelectronic device scaling with this second volume. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of seeming physical limitations to scaling, helped by advancing fabrication techniques. We also observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, we note that a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., power applications, optoelectronics, and sensors) are taking the front stage in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies

CMOS, transistor scaling, nanoscale devices, quantum transport, metalization, back-end-of-line reliability, process reliability, semiconductor device modeling, compact modeling, FinFET, semiconductors, integrated circuits

http://dx.doi.org/10.3390/books978-3-0365-4170-9