Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
M. Jech, T. Grasser, M. Waltl:
"The Importance of Secondary Generated Carriers in Modeling of Full Bias Space";
Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
online;
06.03.2022
- 09.03.2022; in: "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)",
EDTM,
(2022),
S. 265
- 267.
Kurzfassung englisch:
Bias temperature instability and hot-carrier degradation
are undoubtedly the most studied degradation phenomena in
modern electronic devices. Studies, however, typically focus on the
idealized individual degradation mode and neglect their interplay in
full bias space. Here, we propose an extended modeling framework
based on a thorough description of the transport dynamics to
describe the charging kinetics of oxide defects due to a heated
carrier ensemble. We validate our framework using both, the
behavior of single oxide traps and large-area devices across full
bias space.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/EDTM53872.2022.9798262
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.