[Zurück]

S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Spin Torques in ULTRA-Scaled MRAM Devices";
Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 348 - 351.

We present an accurate extension of the coupled
spin and charge transport model used to compute the spintransfer
torques in nanovalves to enable the anlysis of ultrascaled
magnetic tunnel junctions. The charge current behavior is
reproduced with low conductivity locally dependent on the angle
between the magnetization vectors, while for the spin current
proper boundary conditions at the tunnel barrier interfaces are
introduced. We demonstrate that the experimentally measured
voltage and angle dependencies of the torques acting on the free
layer are accurately reproduced, and that using our extended
approach is key to accurately capture the interplay of the
Slonczewski and Zhang-Li torque contributions acting on a
textured magnetization. The described approach is successfully
employed for switching simulation of recently proposed ultrascaled
MRAM cells.