Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Interface Effects in Ultra-Scaled MRAM Cells";
Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
Udine, Italy;
18.05.2022
- 20.05.2022; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)",
(2022).
Kurzfassung englisch:
The development of advanced magnetic tunnel junctions with a single-digit nanometer footprint can be achieved using a multilayered ferromagnetic free layer structure. We demonstrate the switching of a composite free layer consisting of two ferromagnets separated by an MgO layer and an additional capping MgO layer to boost perpendicular anisotropy. A proper design of the interface-induced perpendicular anisotropy and the transverse spin dephasing length helps achieve the switching at a reduced voltage value.
Schlagworte:
Ultra-Scaled MRAM; interfacial-perpendicular magnetic anisotropy
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.