Talks and Poster Presentations (with Proceedings-Entry):
M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Interface Effects in Ultra-Scaled MRAM Cells";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
Udine, Italy;
2022-05-18
- 2022-05-20; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)",
(2022).
English abstract:
The development of advanced magnetic tunnel junctions with a single-digit nanometer footprint can be achieved using a multilayered ferromagnetic free layer structure. We demonstrate the switching of a composite free layer consisting of two ferromagnets separated by an MgO layer and an additional capping MgO layer to boost perpendicular anisotropy. A proper design of the interface-induced perpendicular anisotropy and the transverse spin dephasing length helps achieve the switching at a reduced voltage value.
Keywords:
Ultra-Scaled MRAM; interfacial-perpendicular magnetic anisotropy
Created from the Publication Database of the Vienna University of Technology.