[Zurück]

S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr:
"Design Analysis of Ultra-Scaled MRAM Cells";
Vortrag: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China (eingeladen); 25.10.2022 - 28.10.2022; in: "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0.

Reliable simulation tools provide valuable help in the
design of modern MRAM devices. We apply a finiteelement
solver for the Landau-Lifshitz-Gilbert and the
spin and charge drift-diffusion equations to perform
switching simulations of several MRAM structures. First,
we verify the improved switching characteristics of
structures employing two reference layers recently
introduced in experimental works over structures with a
single fixed magnetization layer. We then demonstrate the
switching of a device with a single-digit nanometer
diameter and a composite and elongated free layer, with
enhanced perpendicular anisotropy, and analyze the
pattern followed by the switching process. Finally, we
show how spin-orbit torques acting on the magnetization
in heavy metal/ferromagnet bilayers can be modeled by
adding spin current terms describing the spin Hall effect,
and we demonstrate a sub-ns switching of the
ferromagnetic layer.