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T. Knobloch, Yu. Illarionov, T. Grasser:
"Finding Suitable Gate Insulators for Reliable 2D FETs";
Vortrag: International Reliability Physics Symposium (IRPS), Dallas, USA (eingeladen); 27.03.2022 - 31.03.2022; in: "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9; S. 2A.1-1 - 2A.1-10.

Field-effect transistors (FETs) based on two-dimensional (2D) materials hold the promise to allow for ulti-mately scaled channel thicknesses of single monolayers. Due to their atomically small thicknesses, the gate control is enhanced while sizable mobilities in the 2D semiconductors are maintained. Thus, in recent years considerable research efforts have focused on 2D FETs and explored various 2D semiconductors and their properties. However, the key challenge of finding suitable gate insulators for 2D FETs has yet received little attention. In this paper, criteria are formulated for identifying suitable gate insulators for reliable 2D FETs. The criteria are grouped into three main categories, these are scaling requirements, reduction of insulator-related charge traps, and technological requirements for the insulator deposition. In addition, possible candidates for gate insulators for 2D FETs are evaluated with respect to the formulated criteria, and important research questions for future investigations are identified

2D materials, high-k gate dielectrics, nanoelec-tronics, reliability engineering, semiconductor device reliabilit

http://dx.doi.org/10.1109/IRPS48227.2022.9764499