Talks and Poster Presentations (with Proceedings-Entry):
H. Ceric, R. Orio, S. Selberherr:
"Electromigration Degradation of Gold Interconnects: A Statistical Study";
Talk: IEEE International Interconnect Technology Conference (IITC),
San Jose, California,;
2022-06-27
- 2022-06-30; in: "2022 IEEE International Interconnect Technology Conference (IITC)",
(2022),
102
- 104.
English abstract:
Electromigration induced degradation of gold metallization used for GaAs devices is a significant, but not sufficiently investigated phenomenon. In this work, a complete physics-based analysis of electromigration in gold is presented. In particular, the dependence of statistical failure features on the variation of geometric properties is investigated. The experimentally observed impact of the interconnect geometry on the mean failure time and the associated standard deviation of the failure times is well reproduced by numerical simulations.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IITC52079.2022.9881313
Created from the Publication Database of the Vienna University of Technology.