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Publikationsliste für
Gerhard Hobler
E362 - Institut für Festkörperelektronik
als Autorin / Autor bzw. wesentlich beteiligte Person
1996 - 2019

151 Datensätze


Zeitschriftenartikel


  1. G. Hobler, D. Maciazek, Z. Postawa:
    "Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA";
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 447 (2019), S. 30 - 33.

  2. G. Hobler, K. Nordlund:
    "Channeling maps for Si ions in Si: Assessing the binary collision approximation";
    Nuclear Instruments & Methods in Physics Research Section B, 449 (2019), S. 17 - 21.

  3. G. Hobler, D. Maciazek, Z. Postawa:
    "Crater function moments: Role of implanted noble gas atoms";
    Physical Review B, 97 (2018), 155307; S. 155307-1 - 155307-13.

    Zusätzliche Informationen

  4. K. Nordlund, G. Hobler:
    "Dependence of ion channeling on relative atomic number in compounds";
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 435 (2018), S. 61 - 69.

    Zusätzliche Informationen

  5. H.M. Urbassek, M. Nietiadi, R.M. Bradley, G. Hobler:
    "Sputtering of SicGe1−c nanospheres";
    Physical Review B, 97 (2018), 155408; 10 S.

    Zusätzliche Informationen

  6. S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa:
    "Simple model of surface roughness for binary collision sputtering simulations";
    Nuclear Instruments & Methods in Physics Research Section B, 393 (2017), S. 17 - 21.

  7. G. Hobler, R.M. Bradley, Herbert M. Urbassek:
    "Probing the limitations of Sigmund´s model of spatially resolved sputtering using Monte Carlo simulations";
    Physical Review B, 93 (2016), 205443; S. 1 - 17.

  8. G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek:
    "Sputtering of silicon membranes with nanoscale thickness";
    Journal of Applied Physics, 119 (2016), S. 245105.

  9. K. Nordlund, F. Djurabekova, G. Hobler:
    "Large fraction of crystal directions leads to ion channeling";
    Physical Review B, 94 (2016), 214109; S. 1 - 20.

  10. G. Hobler:
    "Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane";
    Nuclear Instruments & Methods in Physics Research Section B, 352 (2015), S. 22 - 26.

  11. S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli:
    "Inverse modeling of FIB milling by dose profile optimization";
    Nuclear Instruments & Methods in Physics Research Section B, 341 (2014), S. 77 - 83.

  12. G. Hobler:
    "Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces";
    Nuclear Instruments & Methods in Physics Research Section B, 303 (2013), S. 165 - 169.

  13. S. Lindsey, G. Hobler:
    "Sputtering of silicon at glancing incidence";
    Nuclear Instruments & Methods in Physics Research Section B, 303 (2013), S. 142 - 147.

  14. H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli, E. Platzgummer, H. Löschner:
    "Sputter-Redeposition Method for the Fabrication of Automatically Sealed Micro/Nanochannel using FIBs";
    International Journal Of Precision Engineering And Manufacturing, 12 (2012), 5; S. 893 - 898.

  15. S. Lindsey, G. Hobler:
    "The significance of redeposition and backscattering in nanostructure formation by focused ion beams";
    Nuclear Instruments & Methods in Physics Research Section B, 282 (2012), S. 12 - 16.

  16. M. Budil, G. Hobler:
    "Topography simulation of sputtering using an algorithm with second order approximation in space";
    Nuclear Instruments & Methods in Physics Research Section B, 269 (2011), S. 1614 - 1618.

  17. C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck:
    "Quantitative simulation of ion-beam induced deposition of nanostructures";
    Journal of Vacuum Science & Technology B, 29 (2011), 1; S. 0110311 - 0110315.

  18. G. Hobler, D. Kovac:
    "Dynamic binary collision simulation of focused ion beam milling of deep trenches";
    Nuclear Instruments & Methods in Physics Research Section B, 269 (2011), S. 1609 - 1613.

  19. C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck:
    "Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2";
    Journal of Vacuum Science & Technology B, 28 (2010), 5; S. 946 - 951.

  20. C. Ebm, G. Hobler:
    "Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si";
    Nuclear Instruments & Methods B, 267 (2009), S. 2987 - 2990.

  21. C. Ebm, E. Platzgummer, H. Löschner, S. Eder-Kapl, P. Jöchl, M. Kümmel, R. Reitinger, G. Hobler, A. Köck, R. Hainberger, M. Wellenzohn, F. Letzkus, M. Irmscher:
    "Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition";
    Journal of Vacuum Science & Technology B, 27 (2009), 6; S. 2668 - 2673.

  22. D. Kovac, G. Hobler:
    "Amorphous pocket model based on the modified heat transport equation and local lattice collapse";
    Nuclear Instruments & Methods B, 267 (2009), S. 1229 - 1231.

  23. H. Kim, G. Hobler:
    "Ion Beam Induced Micro/Nano Fabrication: Modeling";
    Journal of the Korean Society for Precision Engineering, 24 (2007), 8; S. 108 - 115.

  24. H. Kim, G. Hobler:
    "Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication";
    Journal of the Korean Society for Precision Engineering, 24 (2007), 10; S. 109 - 116.

  25. H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli:
    "Simulation of ion beam induced micro/nano fabrication";
    Journal of Micromechanics and Microengineering, 17 (2007), 1178; S. 1183.

  26. H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
    "Full three-dimensional simulation of focused ion beam micro/nanofabrication";
    Nanotechnology, 18 (2007), S. 2453031 - 2453038.

  27. H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
    "Level set approach for the simulation of focused ion beam processing on the micro/nano scale";
    Nanotechnology, 18 (2007), S. 2653071 - 2653076.

  28. H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
    "Simulation-based approach for the accurate fabrication of blazed grating sturctures by FIB";
    Optics Express, 15 (2007), 15; S. 9444 - 9449.

  29. W. MoberlyChan, D. Adams, M. Aziz, G. Hobler, T. Schenkel:
    "Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface";
    MRS Bulletin, 32 (2007), S. 424 - 432.

  30. G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
    "Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results";
    Nuclear Instruments & Methods in Physics Research Section B, 255 (2007), 1; S. 105 - 109.

    Zusätzliche Informationen

  31. Z. Rong, F. Gao, W. Weber, G. Hobler:
    "Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C-SiC";
    Journal of Applied Physics, 102 (2007), S. 1035081 - 1035087.

  32. G. Hobler, K. Bourdelle, T. Akatsu:
    "Random and channeling stopping power of H in Si below 100keV";
    Nuclear Instruments & Methods B, 242 (2006), S. 617 - 619.

  33. D. Kovac, G. Hobler:
    "Investigation of the impact of defect models on Monte Carlo simulations of RBS/C spectra";
    Nuclear Instruments & Methods B, 249 (2006), S. 776 - 779.

  34. O. Moutanabbir, B. Terreault, M. Chicoine, J. Simpson, T. Zahel, G. Hobler:
    "Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale";
    Physica B: Condensed Matter, 376 (2006), S. 36 - 40.

  35. G. Otto, G. Hobler, L. Palmetshofer, K. Mayerhofer, K. Piplits, H. Hutter:
    "Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements";
    Nuclear Instruments & Methods B, 242 (2006), S. 667 - 669.

  36. G. Otto, G. Hobler, P. Pongratz, L. Palmetshofer:
    "Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?";
    Nuclear Instruments & Methods in Physics Research Section B, 253 (2006), S. 227 - 231.

    Zusätzliche Informationen

  37. G. Hobler, G. Kresse:
    "Ab initio calculations of the interaction between native point defects in silicon";
    Materials Science and Engineering B, 124-125 (2005), S. 368 - 371.

  38. G. Hobler, G. Otto, D. Kovac, L. Palmetshofer, K. Mayerhofer, K. Piplits:
    "Multiscale approach for the analysis of channeling profile measurements of ion implantation damage";
    Nuclear Instruments & Methods B, 228 (2005), S. 360 - 363.

  39. D. Kovac, G. Otto, G. Hobler:
    "Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation";
    Nuclear Instruments & Methods B, 228 (2005), S. 226 - 229.

  40. K. Mayerhofer, J. Foisner, K. Piplits, G. Hobler, L. Palmetshofer, H. Hutter:
    "Range evaluation in SIMS depth profiles of Er - implantations in silicon";
    Applied Surface Science, 252 (2005), 1; S. 271 - 277.

  41. G. Otto, D. Kovac, G. Hobler:
    "Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon";
    Nuclear Instruments & Methods B, 228 (2005), S. 256 - 259.

  42. G. Hobler, G. Otto:
    "Amorphous pocket model for silicon based on molecular dynamics simulations";
    Nuclear Instruments & Methods B, 206 (2003), S. 81 - 84.

  43. G. Hobler, G. Otto:
    "Status and open problems in modeling of as-implanted damage in silicon";
    Materials Science in Semiconductor Processing, 6 (2003), S. 1 - 14.

  44. A. Lugstein, W. Brezna, G. Hobler, E. Bertagnolli:
    "Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation";
    Journal of Vacuum Science & Technology A, 21 (2003), 5; S. 1644 - 1648.

  45. G. Otto, G. Hobler, K. Gärtner:
    "Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation";
    Nuclear Instruments & Methods B, 202 (2003), S. 114 - 119.

  46. A. Lugstein, B. Basnar, G. Hobler, E. Bertagnolli:
    "Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots";
    Journal of Applied Physics, 92 (2002), 7; S. 4037 - 4042.

  47. W. Boxleitner, G. Hobler:
    "FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling";
    Nuclear Instruments & Methods B, 180 (2001), S. 125.

  48. W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva:
    "Simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams";
    Nuclear Instruments & Methods B, 175-177 (2001), S. 102.

  49. G. Hobler, G. Betz:
    "On the useful range of application of molecular dynamics simulations in the recoil interaction approximation";
    Nuclear Instruments & Methods B, 180 (2001), S. 203.

  50. L. Palmetshofer, M. Gritsch, G. Hobler:
    "Range of ion-implanted rare earth elements in Si and SiO2";
    Materials Science and Engineering B, B 81 (2001), S. 83.

  51. G. Hobler, L. Pelaz, C.S. Rafferty:
    "Dose, energy, and ion species dependence of the effective plus-factor for transient enhanced diffusion";
    Journal of the Electrochemical Society, 147 (2000), S. 3494 - 3501.

  52. H.-H. Vuong, Y. Xie, M. Frei, G. Hobler, L. Pelaz, C.S. Rafferty:
    "Use of transient enhanced diffusion to tailor boron out-diffusion";
    IEEE Transactions on Electron Devices, 47 (2000), S. 1401 - 1405.

  53. G. Hobler, J. Bevk, A. Agarwal:
    "Channeling of low-energy implanted ions through the poly-Si gate";
    IEEE Electron Device Letters, 20 (7) (1999), S. 357 - 359.

  54. G. Hobler, L. Pelaz, C.S. Rafferty:
    "Continuum treatment of spatial correlation in damage annealing";
    Nuclear Instruments & Methods B, 153 (1999), S. 172 - 176.

  55. L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.-J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla:
    "Modeling of the ion mass effect on transient enhanced diffusion: deviation from the "+1" model";
    Applied Physics Letters, 73(10) (1998), S. 1421 - 1423.

  56. R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
    "Vertification of "lateral second. ion mass spectrom." as method for measuring lateral dopant dose distr. in me test str.";
    Journal of Vacuum Science & Technology B, B 16(1) (1998), S. 386 - 393.

  57. G. Hobler, G. Fehlmann:
    "A study of ultra-shallow implanted dopant profiles in silicon using BC and MD simulations";
    Radiation Effects and Deffects in Solids, 141 (1997), S. 113 - 125.

  58. A.Y. Nikulin, A.W. Stevenson, H. Hashizume, D. Cookson, G. Hobler, S.W. Wilkins:
    "Model-Independent determination of 2D strain distribution in ion implanted silicon crystals from x-ray diffraction data";
    Semiconductor Science and Technology, 12(3) (1997), S. 350 - 354.

  59. J. Esfandyari, Ch. Schmeiser, S. Senkader, G. Hobler, B. Murphy:
    "Computer simulation of oxygen precipitation in Cz-grown silicon during HI-LO-HI anneals";
    Journal of the Electrochemical Society, 143(3) (1996), S. 995 - 1001.

  60. G. Hobler:
    "Critical angles and low-energy limits to ion channeling in silicon";
    Radiation Effects and Deffects in Solids, 139 (1996), S. 21 - 85.

  61. G. Hobler:
    "Theoretical estimate of the low-energy limit to ion channeling";
    Nuclear Instruments & Methods B, 115 (1996), S. 323 - 327.

  62. G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder:
    "Vertification of models for the simulation of boron implantation into crystalline silicon";
    Journal of Vacuum Science & Technology B, B 14(1) (1996), S. 272 - 277.

  63. S. Senkader, G. Hobler, Ch. Schmeiser:
    "Determination of the oxide precipitate-silicon matrix interface energy by consid. the change oft precipitate morphology";
    Applied Physics Letters, 69(15) (1996), S. 2202 - 2204.


Buchbeiträge


  1. H. Kim, G. Hobler:
    "Simulation of Focused Ion Beam Milling";
    in: "Nanofabrication Using Focused Ion and Electron Beam", I. Utke, S. Moshkalev, P. Russell (Hrg.); Oxford University Press, 2012, ISBN: 9780199734214, S. 226 - 247.

  2. F. Rüdenauer, G. Hobler, J. Mitterauer, H. Koops, L. Palmetshofer, H. Bluhm:
    "Ion beam devices for material processing and analysis";
    in: "Vacuum Electronics, Components and Devices", Springer, Berlin, 2008, ISBN: 9783540719281, S. 231 - 263.


Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag)


  1. M. Current, G. Hobler, Y. Kawasaki:
    "Aspects of Highly-channeled MeV Implants of Dopants in Si(100)";
    Vortrag: 19th International Workshop on Junction Technology 2019, Kyoto, Japan (eingeladen); 06.06.2019 - 07.06.2019; in: "19th International Workshop on Junction Technology 2019", (2019), ISBN: 978-4-86348-728-4; S. 3 - 4.

    Zusätzliche Informationen

  2. M. Current, G. Hobler, Y. Kawasaki, M. Sugitani:
    "Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS";
    Vortrag: International Conference on Ion Implantation Technology, Würzburg; 16.09.2018 - 21.09.2018; in: "22nd International Conference on Ion Implantation Technology", (2018), S. 251 - 254.

  3. G. Hobler, K. Nordlund, M. Current, W. Schustereder:
    "Simulation Study of Al Channeling in 4H-SiC";
    Vortrag: International Conference on Ion Implantation Technology, Würzburg; 16.09.2018 - 21.09.2018; in: "22nd International Conference on Ion Implantation Technology", (2018), S. 247 - 250.

  4. G. Hobler, D. Maciazek, Z. Postawa, R.M. Bradley:
    "Crater function moments: The influence of implanted noble gas atoms";
    Vortrag: International Workshop on Nanoscale Pattern Formation at Surfaces, Helsinki; 26.06.2017 - 30.06.2017; in: "Book of Abstracts", (2017), S. 33.

  5. G. Hobler, R.M. Bradley, Herbert M. Urbassek:
    "Testing Sigmund´s Model of Sputtering";
    Hauptvortrag: International Workshop on Nanoscale Pattern Formation at Surfaces, Krakow, Polen; 12.07.2015 - 16.07.2015; in: "Book of Abstracts", (2015), S. 7.

  6. S. Waid, H. D. Wanzenböck, G. Hobler, T. Zahel, E. Bertagnolli, M. Mühlberger, R. Schöftner:
    "Topography Extraction Of 3d Structures Through Afm Of Nanoimprints";
    Vortrag: 9th International Conference on Nanoimprint and Nanoprint, Kopenhagen; 13.10.2010 - 15.10.2010; in: "9th International Conference on Nanoimprint and Nanoprint", (2010).

  7. C. Ebm, G. Hobler:
    "Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm";
    Vortrag: MRS Spring Meeting, San Francisco; 13.04.2009 - 17.04.2009; in: "MRS online Proceedings library", (2009), 6 S.

  8. G. Hobler, H. Kim:
    "3D FIB process simulation for photonic applications";
    Vortrag: 1st International Workshop on FIB for Photonics, Eindhoven, the Netherlands (eingeladen); 13.06.2008 - 14.06.2008; in: "Proceedings of the First International Workshop on FIB for Photonics", (2008), ISBN: 978-90-365-2678-4; S. 8 - 11.

  9. T. Zahel, G. Hobler, K. Bourdelle:
    "Investigation of defect evolution during hydrogen implantation using kinetic Monte Carlo simulations";
    Poster: E-MRS Spring Meeting, Strasbourg, France; 26.05.2008 - 30.05.2008; in: "Abstracts", (2008).

  10. H. Kim, G. Hobler:
    "Analysis of Ion Beam-Solid Interactions for Nano Fabrication";
    Vortrag: Autumn Conference of the Korean Society of Precision Engineering, GangJu, South Korea; 20.10.2005 - 21.10.2005; in: "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering", (2005), S. 581 - 584.

  11. H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli:
    ""AMADEUS" Software for Ion Beam Nano Patterning and Characteristics of Nano Fabrication";
    Vortrag: Autumn Conference of the Korean Society of Precision Engineering, GangJu, South Korea; 20.10.2005 - 21.10.2005; in: "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering", (2005), S. 322 - 325.

  12. B. Terreault, M. Chicoine, N. Desrosiers, A. Giguere, G. Hobler, O. Moutanabbir, G. Ross, F. Schiettekatte, P. Simpson, T. Zahel:
    "Isotope effects in low-energy ion-induced splitting";
    Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada (eingeladen); 15.05.2005 - 20.05.2005; in: "Silicon-on-Insulator Technology and Devices XII", (2005), S. 155 - 166.

  13. T. Zahel, G. Otto, G. Hobler:
    "Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si";
    Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada; 15.05.2005 - 20.05.2005; in: "Silicon-on-Insulator Technology and Devices XI", (2005), S. 179 - 184.

  14. T. Zahel, G. Otto, G. Hobler:
    "Atomistic Simulation of Hydrogen Implantation for SOI Wafer Production";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granadea, Spanien; 19.01.2005 - 21.01.2005; in: "EUROSOI 2005, Book of Abstracts", (2005), S. 35 - 36.

  15. G. Hobler:
    "Simulation of Focused Ion Beam Milling";
    Vortrag: SEM X Int. Congress & Exposition on Experimental and Applied Mechanics, Costa Mesa, CA; 07.06.2004 - 10.06.2004; in: "Proc. 5th Int. Symp. MEMS and Nanotechnology", (2004), S. 46 - 51.

  16. G. Hobler, A. Lugstein, W. Brezna, E. Bertagnolli:
    "Simulation of focused ion beam induced damage formation in crystalline silicon";
    Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 01.12.2003 - 05.12.2003; in: "Proceedings of MRS Fall Meeting 2003", (2004), 6 S.

  17. G. Otto, G. Hobler:
    "Coupled kinetic Monte Carlo and molecular dynamics simulations of implant damage accumulation in silicon";
    Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 01.12.2003 - 05.12.2003; in: "Proceedings of MRS Fall Meeting 2003", (2004), S. 1 - 6.

  18. G. Hobler, V. Moroz:
    "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach", Springer, (2001), S. 34 - 37.

  19. G. Hobler, C. Murthy:
    "Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon";
    Vortrag: 13th Int. Conf. Ion Implantation Technology, Alpbach, Austria; 17.09.2000 - 22.09.2000; in: "In Proceeding 13th Int. Conf. Ion Implantaion Technology,IIT-2000", (2000), S. 209 - 212.

  20. G. Hobler, V. Moroz:
    "Simple formulae for the effective plus-factor for transient enhanced diffusion";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork, Ireland; 11.09.2000 - 13.09.2000; in: "ESSDERC 2000", Frontier Group, (2000), S. 168 - 171.

  21. J. Bevk, G. Hobler, D.C. Jacobson, W.M. Mansfield, J. Jackson:
    "Dopant profiles in dual-poly gates with buried ultra-low-energy implants";
    Vortrag: International Conference on Electronic Materials, Charlottesville; 01.07.1999; in: "40th Electronic Materials Conf. Tech. Progr.", (1999), S. 8.

  22. H.-J. Gossmann, C.S. Rafferty, G. Hobler, H.-H. Vuong, D.C. Jacobson:
    "Suppression of reverse short channel effect by a buried carbon layer";
    Vortrag: IEEE Conference, Piscataway; 01.07.1999; in: "IEDM Techn. Dig.", (1999), S. 725 - 728.

  23. G. Hobler, L. Pelaz, C.S. Rafferty:
    "Dose, energy and ion species dependence of the effective plusfactor for transient enhanced diffusion";
    Vortrag: Process Physics and Modeling in Semiconductor Technology, Pennington; 01.07.1999; in: "Process Physics and Modeling in Semiconductor Technology", The Electrochemical Society, (1999), S. 75 - 86.

  24. G. Hobler, C.S. Rafferty:
    "Modeling of (311) defects";
    Vortrag: MRS Warrendale, Warrendale; 01.07.1999; in: "Mat. Res. Soc. Sym. Proceeding", 568 (1999), S. 123 - 134.

  25. J. Bevk, S. Kuehne, H. Vaidya, W.M. Mansfield, G. Hobler:
    "Buried ultra-low-energy gate implants for sub 0.25micron CMOS technology";
    Vortrag: VLSI, Berlin; 01.07.1998; in: "Proceeding Symp. VLSI Technology", (1998), S. 74 - 75.

  26. G. Hobler, C.S. Rafferty, S. Senkader:
    "A model of (311) defect evolution based on nucleation theory";
    Vortrag: IEEE Conference, Piscataway; 01.07.1997; in: "Intl. Conf. Simultation of Semiconductor and Devices", (1997), S. 73 - 76.

  27. G. Hobler, H.-H. Vuong, J. Bevk, A. Agarwal, H.-J. Gossmann, D.C. Jacobson, M. Foad, A. Murrell, Y. Erokhin:
    "Modeling of ultra-low-energy boron implantation in silicon";
    Vortrag: IEEE Conference, Piscataway; 01.07.1997; in: "IEDM Techm. Dig.", (1997), S. 489 - 492.

  28. R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
    "Vertification of "lateral SIMS" ...";
    Vortrag: 4th Int. Workshop on the Measurement..., Berlin; 01.07.1997; in: "Proc. 4th Int. Workshop on the Measurement, Characterization and Modelling...", (1997), S. 22.1 - 22.11.

  29. S. Senkader, G. Hobler:
    "A kinetic model for precipitation of oxygen in silicon";
    Vortrag: NATO ARW, Dordrecht; 01.07.1996; in: "Early Stages of Oxygen-Precipitation in Silicon, NATO ARW Series", Kluwer Academic, (1996), S. 447 - 454.

  30. S. Senkader, G. Hobler, Ch. Schmeiser:
    "Modeling and simultation of oxygen precipitation in Si: Precipitate-point defect interactions and influence of hydrogen";
    Vortrag: IEEE Conference, Piscataway; 01.07.1996; in: "SISPAD`96", (1996), S. 31 - 32.


Vorträge und Posterpräsentationen (ohne Tagungsband-Eintrag)


  1. G. Hobler, D. Maciazek, Z. Postawa:
    "Ion bombardment-induced atom redistribution in amorphous silicon: MD versus BCA";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Shanghai; 17.06.2018 - 22.06.2018.

  2. G. Hobler, K. Nordlund:
    "Channeling maps: Assessing the binary collision approximation";
    Poster: International Conference on Simulation of Radiation Effects in Solids, Shanghai; 17.06.2018 - 22.06.2018.

  3. K. Nordlund, F. Djurabekova, G. Hobler:
    "Effect of atom sizes in ionic compounds on channeling: channeling map analysis";
    Poster: International Conference on Radiation Effects in Insulators, Versailles, France; 02.07.2017 - 07.07.2017.

  4. G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek:
    "Sputtering of silicon membranes with nanoscale thickness";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Loughborough, GB; 19.06.2016 - 24.06.2016.

  5. S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa:
    "Simple model of surface roughness for binary collision sputtering simulations";
    Poster: International Conference on Simulation of Radiation Effects in Solids, Loughborough, GB; 19.06.2016 - 24.06.2016.

  6. G. Hobler:
    "Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane";
    Vortrag: International Conference on Computer Simulation on Radiation Effects in Solids, Alicante, Spanien; 08.06.2016 - 13.06.2016.

  7. H. D. Wanzenböck, S. Waid, G. Hobler, S. Lindsey:
    "2.5D-Nanoimprint Lithography";
    Poster: NIL Industrial Day, Linz; 13.03.2014 - 14.03.2014.

  8. S. Lindsey, G. Hobler:
    "Simulation of Glancing Angle Sputtering with a Density Gradient Model to Represent Surface Roughness";
    Vortrag: Particle-surface interactions: from surface analysis to materials processing (PASI), Luxemburg; 03.06.2013 - 05.06.2013.

  9. S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli:
    "Inverse Modeling of FIB Milling by Dose Profile Optimization";
    Poster: European Materials Research Society (EMRS), Strasbourg, Frankreich; 27.05.2013 - 31.05.2013.

  10. S. Waid, J. Mika, S. Lindsey, H. D. Wanzenböck, G. Hobler, E. Bertagnolli:
    "Fabrication of 3D Axon Isolation Channels by Inverse Modelling Assisted Focused Ion Beam Patterning";
    Poster: Micro- and Nano-Engineering Conference, Toulouse, France; 16.09.2012 - 20.09.2012.

  11. G. Hobler:
    "Molecular dynamics study of atom ejection from an eroding (100)-Si surface";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Santa Fe, New Mexico, USA; 24.06.2012 - 29.06.2012.

  12. S. Lindsey, G. Hobler:
    "Sputtering of Silicon at Glancing Incidence";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Santa Fe, New Mexico, USA; 24.06.2012 - 29.06.2012.

  13. S. Lindsey, G. Hobler:
    "The Role/Relevance/Significance/Implications of Redeposition and Backscattering in Focused Ion Beam Milling/Nanostructure Formation by Focused Ion Beams";
    Poster: E-MRS Spring Meeting, Nice, Frankreich; 09.05.2011 - 13.05.2011.

  14. M. Budil, G. Hobler:
    "Topography Simulation of Sputtering using an Algorithm with Second Order Approximation in Space";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen; 19.07.2010 - 23.07.2010.

  15. G. Hobler:
    "Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches";
    Vortrag: International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen; 19.07.2010 - 23.07.2010.

  16. G. Hobler:
    "Simulation of Nanostructuring with Focused Ion Beams";
    Vortrag: FIB-Workshop, Wien (eingeladen); 28.06.2010 - 29.06.2010.

  17. C. Ebm, M. Budil, G. Hobler:
    "oeAssessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si";
    Vortrag: 9th International Conference on Simulation of Radiation Effects in Solids, Beijing, China; 12.10.2008 - 17.10.2008.

  18. D. Kovac, G. Hobler:
    "oeAmorphous pocket model based on the modified heat transport equation and local lattice collapse";
    Vortrag: International Conference on Ion Beam Modification of Materials (IBMM), Dresden, Deutschland; 31.08.2008 - 05.09.2008.

  19. P. Pongratz, G. Otto, G. Hobler, L. Palmetshofer:
    "Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations aof Collision Cascades in Silicon";
    Vortrag: ICDS -24, 24th International Conference on Defects in Semiconductors, New Mexico, USA; 22.07.2007 - 27.07.2007.

  20. G. Hobler:
    "Simulation von Topographie- und Materialmodifikation mittels fokussierter Ionenstrahlen";
    Vortrag: Seminar Institut für Allgemeine Physik (IAP), TU Wien; 19.06.2006.

    Zusätzliche Informationen

  21. G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
    "Comparison of TEM image contrast simulations of amorphous pockets in Si as obtained by molecular dynamics simulations with experimental results";
    Vortrag: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Washington, USA; 18.06.2006 - 23.06.2006.

  22. G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
    "Verification of MD Results on Amorphous Pockets in Si using TEM Image Contrast Simulations";
    Vortrag: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Washington, USA; 18.06.2006 - 23.06.2006.

  23. O. Moutanabbir, B. Terreault, M. Chicoinec, J. Simpson, T. Zahel, G. Hobler:
    "Hydrogen/Deuterium-defect complexes involved in the ion-cutting of Si(001) at the sub-100 nm scale";
    Vortrag: International Conference on Defects in Semiconductors, Awaji Island, Hyogo, Japan (eingeladen); 24.07.2005 - 29.07.2005.

  24. G. Hobler, G. Kresse:
    "Ab-initio calculations of the interaction between native point defects in silicon";
    Vortrag: Materials Research Society Spring Meeting (MRS), Straßburg, Frankreich; 30.05.2005 - 03.06.2005.

  25. G. Hobler:
    "Status and open problems in silicon implant damage modeling";
    Vortrag: 3rd Int. Meeting Challenges in Predictive Process Simulation, Prague, Czech Republic; 13.10.2002 - 17.10.2002.

  26. G. Hobler, G. Otto:
    "Detailed modeling of ion implantation damage in silicon using a binary collision approach with information from molecular dynamics simulations";
    Vortrag: IBMM 2002, Kobe, Japan; 01.09.2002 - 06.09.2002.

  27. H. D. Wanzenböck, S. Harasek, G. Hobler, H. Hutter, H. Störi, P. Pongratz, E. Bertagnolli:
    "Dielectric nanostructure fabricatio using a focused ion beam";
    Vortrag: IBMM 2002, Kobe, Japan; 01.09.2002 - 06.09.2002.

  28. H. D. Wanzenböck, G. Hobler, H. Langfischer, S. Harasek, W. Brezna, J. Smoliner, E. Bertagnolli:
    "Characterization of Doping and intermixing effects of focused ion beam processing";
    Vortrag: IBMM 2002, Kobe, Japan; 01.09.2002 - 06.09.2002.

  29. G. Otto, G. Hobler, K. Gärtner:
    "Defect characterization of 10-200 eV recoil events in silicon using classical molecular dynamcs ";
    Vortrag: 6th Int. Conf. Computer Simulation of Radiation Effects in Solids, Dresden, Deutschland; 23.06.2002 - 27.06.2002.

  30. W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva:
    "Dynamic simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams";
    Vortrag: 12th International Conference Ion Beam Modification of Materials, Gramado-Canela, Brasil; 03.09.2000 - 08.09.2000.

  31. G. Hobler:
    "Modeling of Focused Ion Beam Milling";
    Vortrag: Bell Laboratories, Lucent Technologies; 31.07.2000.

  32. W. Boxleitner, G. Hobler:
    "FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling";
    Vortrag: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA; 24.07.2000 - 28.07.2000.

  33. G. Hobler, G. Betz:
    "On the useful range of application of molecular dynamics simulations in the recoil interaction approximation";
    Vortrag: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA; 24.07.2000 - 28.07.2000.

  34. L. Palmetshofer, M. Gritsch, G. Hobler:
    "Range ot ion-implanted rare earth element in Si and Si02";
    Poster: Materials Research Society Spring Meeting (MRS), STrasbourg, France; 31.05.2000 - 02.06.2000.


Patente


  1. G. Hobler, M. Mastrapasqua, M.R. Pinto, E. Sangiorgi:
    "Monolithically integrated static random access memory device";
    Patent: USA, Nr. 6144073; eingereicht: 01.11.2000, erteilt: 07.11.2000.


Dissertationen (eigene und begutachtete)


  1. M. Kampl:
    "Investigating Hot-Carrier Effects using the Backward Monte Carlo Method";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, A. Garcia Loureiro, G. Hobler; E360, 2019; Rigorosum: 05.04.2019.

  2. S. Lindsey:
    "Computer Simulation of FIB Sputtering";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, P. Pichler; E362, 2015; Rigorosum: 17.03.2015.

  3. C. Ebm:
    "Simulation of ion beam induced etching and deposition";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, J. Melngailis; E362, 2010; Rigorosum: 17.09.2010.

  4. T. Zahel:
    "Modelling defect formation and evolution during SOI wafer fabrication";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, H. Cerva; Institut für Festkörperelektronik, 2009; Rigorosum: 02.11.2009.

  5. D. Kovac:
    "Multiscale Modeling of Ion Implantation Damage in Silicon";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, L. Palmetshofer; Institut für Festkörperelektronik, 2007; Rigorosum: 24.04.2007.

  6. H. Kim:
    "Design, simulation and fabrication of micro/nano functional structures using ION beams";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, H. Kosina; Institut für Festkörperelektronik, 2007; Rigorosum: 20.04.2007.

  7. G. Otto:
    "Multi-method Simulations and Transmission Electron Microscope Investigations of Ion Implantation Damage in Silicon";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, P. Pongratz; Institut für Festkörperelektronik, 2005.


Diplom- und Master-Arbeiten (eigene und betreute)


  1. T. Zahel:
    "Investigation of the isotope effect in hydrogen induced blistering of silicon using kinetic Monte Carlo Simulation";
    Betreuer/in(nen): G. Hobler; Institut für Festkörperelektronik, 2005.

  2. G. Fehlmann:
    "Untersuchungen von Modellen für die Monte-Carlo-Simulation";
    Betreuer/in(nen): G. Hobler; Institut für Festkörperelektronik, 2000.

  3. P. Lampacher:
    "Dram-Leseverstärker mit Mismatchkompensation der Entscheidertransistoren";
    Betreuer/in(nen): G. Hobler; Institut für Festkörperelektronik, 1999.


Wissenschaftliche Berichte


  1. S. Lindsey, G. Hobler, C. Rue, M. Maazouz:
    "Focused Ion Beam Simulation - Investigation of the Curtaining Effect in TEM Sample Preparation";
    2012.

  2. T. Zahel, G. Hobler:
    "IMSIL-kLMC";
    2009.

  3. T. Zahel, G. Hobler:
    "Kinetic Monte Carlo studies of Smart Cut technology in Si: Final report";
    2009.

  4. P. Beck, G. Hobler, A. Köck, S. Rollet, E. Wachmann, M. Wind:
    "RADSI - Radiation Hardness of Silicon Nanostructures, Technical final report";
    2008.

  5. T. Zahel, G. Hobler:
    "Kinetic Monte Carlo studies of Smart Cut technology in Si: Platelet model and influence of He damage on platelet formation";
    2008.

  6. T. Zahel, G. Hobler:
    "Kinetic Monte Carlo studies of Smart Cut technology in Si: The influence of He damage on defects generated by H and He co-implantation";
    2008.

  7. P. Beck, G. Hobler, E. Wachmann:
    "RADSI Progress Report";
    2007.

  8. G. Hobler:
    "IMSIL Code Modification and Calibration for H inplantations into GaN";
    2007.

  9. G. Hobler, D. Kovac:
    "Interim Report on FIBSIM Code Development";
    2007.

  10. G. Hobler, T. Zahel:
    "Kinetic Monte Carlo studies of Smart Cut technology in Si";
    2007.

  11. W. Boxleitner, G. Hobler:
    "High Quality Sample Operation for Nanometric Analysis and Testing Equipments";
    2000.