Publications in Scientific Journals:
M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, I. Dalcanale:
"Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failure";
Microelectronics Reliability,
58
(2016),
177
- 184.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.microrel.2015.11.026
Electronic version of the publication:
http://publik.tuwien.ac.at/files/PubDat_249035.pdf
Created from the Publication Database of the Vienna University of Technology.