Zeitschriftenartikel:
J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement learning to reduce failures in SOT-MRAM switching";
Microelectronics Reliability (eingeladen),
135
(2022),
114570;
S. 1
- 5.
Kurzfassung englisch:
A reinforcement learning strategy is applied to find a reliable switching scheme for deterministic switching of a
perpendicularly magnetized spin-orbit torque magnetoresistive memory cell. Current pulses sent along orthogonal
metal wires allow the field-free reversal of the magnetization. The current pulses are optimized such that
reliable switching can be achieved over a wide range of material parameters. Micromagnetic simulations confirm
the reliability of the presented approach.
Schlagworte:
Reinforcement learning Spin-orbit torque memory Magnetic field-free Switching reliability
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.microrel.2022.114570
Elektronische Version der Publikation:
https://publik.tuwien.ac.at/files/publik_304551.pdf
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.