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S. Selberherr, V. Sverdlov:
"About electron transport and spin control in semiconductor devices";
Solid-State Electronics (invited), 197 (2022), 108443.

As the scaling of CMOS-based technology displays signs of an imminent saturation, employing the second
intrinsic electron characteristics - the electron spin - is attractive to further boost the performance of integrated
circuits and to introduce new computational paradigms. A single electron spin forms a qubit and is suitable for
quantum applications. In digital applications, the spin promises to offer an additional functionality to chargebased
CMOS circuitry. Recently, spin injection into a semiconductor and spin manipulation by the gate
voltage were successfully demonstrated providing a vision that devices using spin in addition to charge may
appear in significant numbers on the market in the non-distant future.
On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin-orbit torque
(SOT) magnetoresistive random access memories (MRAMs) are already competing with flash memory and SRAM
for embedded applications. A combination of nonvolatile elements with CMOS circuitry allows to shift the data
processing into the nonvolatile segment, paving the way for a novel low power computational paradigm based on
logic-in-memory and in-memory computing architectures.
To model MRAM, we innovatively extend the spin and charge transport equations to multi-layered structures
consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by
modeling the magnetization dynamics in ultra-scaled MRAM cells.

Spintronic devices, Simulations Charge and spin currents TCAD Digital spintronics SpinFET SpinMOSFET STT-MRAM SOT-MRAM

http://dx.doi.org/10.1016/j.sse.2022.108443

https://publik.tuwien.ac.at/files/publik_304557.pdf